| PART |
Description |
Maker |
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| HY29LV800 HY29LV800T-55 HY29LV800T-55I HY29LV800T- |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory 8兆位00万x 8/512K × 16）低压快闪记忆体
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| CY14B104L-BA15XCT CY14B104L-BA15XI |
4 Mbit (512K x 8/256K x 16) nvSRAM 512K X 8 NON-VOLATILE SRAM, 15 ns, PBGA48
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1387D-250AXC CY7C1386D-167BGC CY7C1386D-167BGX |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1386D-250AXC ICY7C1387D-167BGI ICY7C1387D-167B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY62148DV30 CY62148DV30LL-55BVI CY62148DV30L-55ZSX |
4-Mbit (512K x 8) MoBL垄莽 Static RAM
4-Mbit (512K x 8) MoBL? Static RAM
|
Cypress Semiconductor
|
| TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 |
(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭
TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
|
TE Connectivity, Ltd.
Intel, Corp.
Intel Corp.
Intel Corporation
|
| CY62148EV30LL-45BVXI CY62148EV30LL-55SXI CY62148EV |
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 45 ns, PDSO32
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
